N-state memory Cell
FRE has been innovating a new type of N-state memory cell (Patent granted).
- The markets of portable electronics are growing with an increased requirement for smaller, cheaper and faster electronics.
- Notably portable electronics, such as laptops and mobile phones, benefits from the present project.
- Larger packing density: contemporary binary memories require several memory cells for presenting data.
- The numerical processes become significantly simpler as back- and forth conversion of the binary data to decimal, hexadecimal, octal data etc. can be reduced or even eliminated.
- Less conversions means simpler circuits
- Faster electronics
- The utilization of ferroelectric material as a storing media allows a further simplification. The state of ferroelectric material remains also when the power is turned off, so no memory refreshing electronics is required.
- Smaller energy consumption
There is a potential way1 to increase the operation temperature of ferroelectrics by several hundred degrees K
1. J. Frantti, Y. Fujioka, A. Puretzky, Y. Xie, Z.-G. Ye, C. Parish, and A. M. Glazer. J. Phys.: Condens. Matter 27, 025901 (2015).
Ferroelectric domains dictate the response to an external stimuli
