Sivusto ei tue käyttämääsi selainta. Suosittelemme selaimen päivittämistä uudempaan versioon.

N-state memory Cell

FRE has been innovating a new type of N-state memory cell, which is now at the prototype stage. Patent application has been filed.

  • The markets of portable electronics are growing with an increased requirement  for smaller,  cheaper  and  faster  electronics.
  • Notably portable electronics, such as laptops and mobile phones, benefits from the present project. 
  • Collaboration  with  the  high-level  research  centers and universities ensure successful prototype development and testing.

 

Benefits of the N-state memory cell

  • Larger packing density: contemporary binary memories require several memory cells for presenting data. The memory size scales down approximately proportionally to 1/N.

Example: one cell is sufficient to present ten digits (N = 10), whereas four cells are required in the contemporary binary cells.

- The numerical processes become significantly simpler as back- and forth conversion of the binary data to decimal, hexadecimal, octal data etc. can be reduced or even eliminated. 

  • Less conversions means simpler circuits
  • Faster electronics

-   The utilization of ferroelectric material as a storing media allows a further simplification. The state of ferroelectric material remains also when the power is turned off, so no memory refreshing electronics is required.

  • Simpler electronics
  • Smaller energy consumption

 

There is a potential way1 to increase the operation temperature of ferroelectrics by several hundred degrees K

 

1. J. Frantti, Y. Fujioka, A. Puretzky, Y. Xie, Z.-G. Ye, C. Parish, and A. M. Glazer. J. Phys.: Condens. Matter 27, 025901 (2015).

 

Ferroelectric domains dictate the response to an external stimuli